| 摘要 |
Due to a nonspecific factor in a process of manufacturing a thin film transistor, a threshold voltage is frequently shifted to a minus or a plus side. When a value shifted from 0 V is larger, an increase in driving voltage is caused to increase a power consumption of a semiconductor device. A resin layer which has good planarization for a first protection insulating layer of covering an oxide semiconductor layer is formed; and thereafter, a second protection insulating layer is formed on the resin layer using a sputtering method or plasma CVD method under a lower power condition. Moreover, to control a threshold voltage with a desired value, a gate electrode is formed on/beneath the oxide semiconductor layer. |
