发明名称 |
ERASE ALGORITHM FOR FLASH MEMORY |
摘要 |
A non-volatile memory device includes a sector pass/fail indicator circuit configured to store a pass/fail indicator for each sector in a first block of memory cells. The pass/fail indicator has a first value indicating the respective sector has failed erase verification and has a second value indicating the respective sector has passed erase verification. The sector pass/fail indicator circuit set the respective pass/fail indicators to the second value for one or more sectors in the first block after the respective sectors pass erase verification following a previous block erase operation of the first block. The first block is subjected to subsequent block erase operation where only word lines associated with the sectors having a pass/fail indicator having the first value are biased to the first bias voltage level. |
申请公布号 |
US2015380101(A1) |
申请公布日期 |
2015.12.31 |
申请号 |
US201514789252 |
申请日期 |
2015.07.01 |
申请人 |
Integrated Silicon Solution, Inc. |
发明人 |
Lee Jong Sang;Chen Hounien;Jin Kyoung Chon |
分类号 |
G11C16/34;G11C16/16;G11C16/08 |
主分类号 |
G11C16/34 |
代理机构 |
|
代理人 |
|
主权项 |
1. (canceled) |
地址 |
Milpitas CA US |