发明名称 PROTECTIVE LAYER(S) IN ORGANIC IMAGE SENSORS
摘要 The present disclosure relates to an organic image sensor and an associated method. By inserting an inorganic protective layer between an electrode and an organic photo active region of the image sensor, the organic photo active region is protected from moisture, oxygen or following process damage. The inorganic protective layers also help to suppress the leakage in the dark. In some embodiments, the organic image sensor comprises a first electrode, an organic photoelectrical conversion structure disposed over the first electrode and a second electrode disposed over the organic photoelectrical conversion structure. The organic image sensor further comprises a first protective structure covering a top surface and a sidewall of the organic photoelectrical conversion structure.
申请公布号 US2015380669(A1) 申请公布日期 2015.12.31
申请号 US201414316946 申请日期 2014.06.27
申请人 Taiwan Semiconductor Manufacturing Co., Ltd. 发明人 Liang Chin-Wei;Tsai Cheng-Yuan;Tsai Chia-Shiung
分类号 H01L51/44;H01L51/00;H01L27/30 主分类号 H01L51/44
代理机构 代理人
主权项 1. An organic image sensor, comprising: a first electrode; an organic photoelectrical conversion structure disposed over the first electrode to convert one or more photons having wavelength falling within a predetermined wavelength range into an electrical signal; a second electrode disposed over the organic photoelectrical conversion structure, wherein the second electrode is transparent in the predetermined wavelength range; and a first charge blocking structure disposed between the first electrode and the organic photoelectrical conversion structure to restrain a first kind of electric charge to move from the first electrode to the organic photoelectrical conversion structure; a second charge blocking structure disposed between the organic photoelectrical conversion structure and the second electrode to restrain a second kind of electric charge to move from the second electrode to the organic photoelectrical conversion structure; and a first protective structure disposed between the second charge blocking structure and the organic photoelectrical conversion structure covering a top surface and a sidewall of the organic photoelectrical conversion structure.
地址 Hsin-Chu TW