| 发明名称 |
METAL GATE STRUCTURE AND MANUFACTURING METHOD THEREOF |
| 摘要 |
A method for manufacturing a metal gate structure includes providing a substrate having a high-K gate dielectric layer and a bottom barrier layer sequentially formed thereon, forming a work function metal layer on the substrate, and performing an anneal treatment to the work function metal layer in-situ. |
| 申请公布号 |
US2015380512(A1) |
申请公布日期 |
2015.12.31 |
| 申请号 |
US201514848362 |
申请日期 |
2015.09.09 |
| 申请人 |
United Microelectronics Corp. |
发明人 |
Yang Chan-Lon;Hsu Chi-Mao;Wu Chun-Yuan;Cheng Tzyy-Ming;Tzou Shih-Fang;Lin Chin-Fu;Huang Hsin-Fu;Tsai Min-Chuan |
| 分类号 |
H01L29/51;H01L29/423;H01L29/49 |
主分类号 |
H01L29/51 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A metal gate structure comprising:
a high-K gate dielectric layer; a bottom barrier layer formed on the high-K gate dielectric layer; a titanium tri-aluminide (TiAl3) work function metal layer formed on the bottom barrier layer; a top barrier layer formed on the TiAl3 layer; and a low-resistance metal layer formed on the top barrier layer. |
| 地址 |
Hsin-Chu City TW |
