SEMICONDUCTOR DEVICE DRIVE METHOD

摘要

A semiconductor device drive method achieves a balance between a lifetime and a detection sensitivity which are required for a temperature detection diode formed via an insulating film on a substrate on which an active element is formed. The semiconductor device drive method includes energizing the temperature detection diode with a constant current, the constant current having a current density value between an upper limit defined based on the lifetime of the temperature detection diode, and a lower defined based on a variation allowable voltage of an output voltage of the temperature detection diode with respect to a standard deviation.

主权项

1. A drive method of a semiconductor device including a temperature detection diode having a pn junction formed via an insulating film on a substrate on which a semiconductor active element is formed, comprising:
detecting a voltage generated in the temperature detection diode by energizing the temperature detection diode with a constant current, the constant current having a current value determined to correspond to a current density within a range between an upper limit and a lower limit, wherein the upper limit of the current density energizing a temperature detection diode is defined based on a lifetime desired of the temperature detection diode, and the lower limit of the current density energizing the temperature detection diode is defined based on a variation allowable voltage of an output voltage of the temperature detection diode with respect to a standard deviation of the output voltage.