Apparatus And Methods For Differential Pressure Chucking Of Substrates

摘要

Apparatus and methods for processing a semiconductor wafer so that the wafer remains in place during processing. The wafer is subjected to a pressure differential between the top surface and bottom surface so that sufficient force prevents the wafer from moving during processing.

主权项

1. A processing chamber comprising:
at least one gas distribution assembly comprising a plurality of gas channels, the plurality of gas channels comprising a first reactive gas channel, a second reactive gas channel and at least one purge gas channel; and a susceptor assembly below the at least one gas distribution assembly, the susceptor assembly including a top surface, a bottom surface and at least one recess in the top surface to support an edge of a wafer, the at least one recess having at least one passage forming fluid communication between the recess and the bottom surface.