发明名称 ARRAY SUBSTRATE, MANUFACTURING METHOD THEREOF, AND DISPLAY DEVICE
摘要 An array substrate, manufacturing method thereof and a display device are provided. The array substrate comprises thin film transistor units (2) arranged in array, and further comprises a quantum dot layer (3) disposed over the thin film transistor units (2). The quantum dot layer includes at least three kinds of quantum dots, any one kind of which emits light of a respective wave band when being irradiated and excited by light from an incident portion of the array substrate. The array substrate can improve color gamut range, transmittance of a display device without increasing the power consumption of the display device.
申请公布号 US2015380671(A1) 申请公布日期 2015.12.31
申请号 US201414428847 申请日期 2014.05.29
申请人 BOE TECHNOLOGY GROUP CO., LTD. 发明人 SHU Shi;GU Jingxia;XU Chuanxiang;QI Yonglian;YAO Qi
分类号 H01L51/50;H01L51/52;H01L51/56;H01L27/32 主分类号 H01L51/50
代理机构 代理人
主权项 1. An array substrate, comprising: thin film transistor units arranged in array on a base substrate; a quantum dot layer disposed over the thin film transistor units, the quantum dot layer comprising at least three kinds of quantum dots, any one of which emits light of a respective wave band when being irradiated and excited by light from an incident portion of the array substrate; and further comprising in sequence, the base substrate, the thin film transistor units, a first insulation layer, a second insulation layer, the quantum dot layer and a first conductive layer, wherein the first insulation layer is provided with a first via, the second insulation layer is provided with a second via, and the quantum dot layer is provided with a third via, the first via, the second via and the third via are communicated with each other, and the first conductive layer is connected to a drain of the thin film transistor unit through the first via, the second via and the third via.
地址 Beijing CN