SEMICONDUCTOR DEVICE AND DIELECTRIC FILM

摘要

A semiconductor device according to an embodiment includes a first conductive layer, a second conductive layer, and a dielectric film provided between the first and the second conductive layers. The dielectric film including a fluorite-type crystal and a positive ion site includes Hf and/or Zr, and a negative ion site includes O. In the dielectric film, parameters a, b, c, p, x, y, z, u, v and w satisfy a predetermined relation. The axis length of the a-axis, b-axis and c-axis of the original unit cell is a, b, and c, respectively. An axis in a direction with no reversal symmetry is c-axis, a stacking direction of atomic planes of two kinds formed by negative ions disposed at different positions is a-axis, the remainder is b-axis. The parameters x, y, z, u, v and w are values represented using the parameter p.

主权项

1. A semiconductor device comprising:
a first conductive layer; a second conductive layer; and a dielectric film provided between the first conductive layer and the second conductive layer, the dielectric film including a fluorite-type crystal, wherein a positive ion site of the fluorite-type crystal includes at least one of Hf (hafnium) and Zr (zirconium), and a negative ion site of the fluorite-type crystal includes O (oxygen), and following formulae (1) to (13) are satisfied in the fluorite-type crystal, when, among three axes of an original unit cell of the crystal, an axis in a direction with no reversal symmetry is c-axis, a stacking direction of atomic planes of two kinds formed by negative ions disposed at different positions is a-axis, remainder is b-axis, axis length of the a-axis of the original unit cell is a, axis length of the b-axis thereof is b, axis length of the c-axis thereof is c, a parameter is p, and x, y, z, u, v and w are values represented using the parameter p.
x=0.0000077293×p×p−0.00091484×p+0.50556  (1)y=0.0000089659×p×p−0.00082246×p+0.52512  (2)z=−0.000012625×p×p−0.00045149×p+0.50696  (3)u=−0.000042665×p×p+0.00097971×p+1.0028  (4)v=−0.00032701×p+0.96306  (5)w=−0.000042194×p×p+0.00068404×p+0.96543  (6)−0.0074≦x−a≦0.026  (7)−0.0075≦y−b≦0.026  (8)−0.0056≦z−c≦0.006  (9)−0.063≦u−c÷a≦0.0055  (10)−0.031≦v−a÷b≦0.0024  (11)−0.077≦w−c÷b≦0.006  (12)1≦p≦40  (13)