TUNGSTEN CHEMICAL-MECHANICAL POLISHING COMPOSITION

摘要

A chemical-mechanical polishing composition includes colloidal silica abrasive particles having a chemical compound incorporated therein. The chemical compound may include a nitrogen-containing compound such as an aminosilane or a phosphorus-containing compound. Methods for employing such compositions include applying the composition to a semiconductor substrate to remove at least a portion of a layer.

主权项

1. A chemical-mechanical polishing composition comprising:
a water based liquid carrier; colloidal silica abrasive particles dispersed in the liquid carrier; an aminosilane compound or a phosphonium silane compound incorporated in the colloidal silica abrasive particles internal to an outer surface thereof; an iron containing accelerator; and a pH in a range from about 1.5 to about 7.