PASSIVATION METHOD FOR SEMICONDUCTOR MATERIAL

摘要

Provided is a passivation method whereby passivation of a semiconductor material surface can be performed at a lower temperature compared with prior art. In the method, a semiconductor material, for instance, a silicon substrate, is disposed as a sample (10) in a container (2), and is immersed in liquid-phase water (6) at a temperature of 100-125°C, and passivation of a surface of the semiconductor material is performed. At that time, pressure applied to the water (6) is, for instance, 1.0×105-3.3×105 Pa.