| 摘要 |
According to an embodiment of the present invention, a substrate having a first conduction membrane formed on a base insulation membrane is prepared. A resistance change device structure is formed on the first conduction membrane. By using a first mask pattern layer extending in a first direction and having ends connected to each other, the resistance change device structure and the first conduction membrane are patterned, so a first intermediate pattern structure is formed. A second conduction membrane is laminated on the first intermediate pattern structure. By using a second mask pattern layer extending in a second direction crossing the first direction and having ends connected to each other, the second conduction membrane and the first intermediate pattern structure are patterned, so a second intermediate pattern structure is formed. A gap-fill insulation layer for filling at least the second intermediate pattern structure is formed. By using the cut mask pattern layer formed on the gap-fill insulation layer, connected ends of the second intermediate pattern structure are separated. |
