THREE DIMENSIONAL VERTICAL NAND DEVICE WITH FLOATING GATES
摘要
A monolithic three dimensional NAND string including a stack of alternating first material layers and second material layers different from the first material layers over a major surface of a substrate. The first material layers include a plurality of control gate electrodes and the second material layers include an insulating material and the plurality of control gate electrodes extend in a first direction. The NAND string also includes a semiconductor channel, a blocking dielectric, and a plurality of vertically spaced apart floating gates. Each of the plurality of vertically spaced apart floating gates or each of the second material layers includes a first portion having a first thickness in the second direction, and a second portion adjacent to the first portion in the first direction and having a second thickness in the second direction which is different than the first thickness.
申请公布号
WO2015199994(A2)
申请公布日期
2015.12.30
申请号
WO2015US35321
申请日期
2015.06.11
申请人
SANDISK TECHNOLOGIES, INC.
发明人
KAI, JAMES;CHIEN, HENRY;MATAMIS, GEORGE;KWON, THOMAS JONGWAN;LEE, YAO-SHENG