发明名称 THREE DIMENSIONAL VERTICAL NAND DEVICE WITH FLOATING GATES
摘要 A monolithic three dimensional NAND string including a stack of alternating first material layers and second material layers different from the first material layers over a major surface of a substrate. The first material layers include a plurality of control gate electrodes and the second material layers include an insulating material and the plurality of control gate electrodes extend in a first direction. The NAND string also includes a semiconductor channel, a blocking dielectric, and a plurality of vertically spaced apart floating gates. Each of the plurality of vertically spaced apart floating gates or each of the second material layers includes a first portion having a first thickness in the second direction, and a second portion adjacent to the first portion in the first direction and having a second thickness in the second direction which is different than the first thickness.
申请公布号 WO2015199994(A2) 申请公布日期 2015.12.30
申请号 WO2015US35321 申请日期 2015.06.11
申请人 SANDISK TECHNOLOGIES, INC. 发明人 KAI, JAMES;CHIEN, HENRY;MATAMIS, GEORGE;KWON, THOMAS JONGWAN;LEE, YAO-SHENG
分类号 H01L21/28 主分类号 H01L21/28
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