发明名称 METHOD FOR FORMING AN ELECTRODE STRUCTURE FOR A CAPACITIVE TOUCH SENSOR
摘要 <p>A method of forming an electrode structure for a capacitive touch sensor in a transparent conductive layer located on a transparent non-conductive layer which is located on a colour filter layer by a direct write laser scribing process using a pulsed solid state laser, the laser wavelength, pulse length and beam profile at the substrate being selected to have a wavelength in the range 257 nm to 266 nm, a pulse length in the range 50 fs to 50 ns, and a top hat beam profile having a uniformity of power or energy density between a value (Emax) and a minimum value (Emin) of less than 10%, where uniformity is defined as (Emax−Emin)/(Emax+Emin). 1 Grooves can thus be formed in the transparent conductive layer to electrically isolate areas of the transparent conductive layer on opposite sides of each groove with substantially no damage to the transparent non-conductive layer or the colour filter layer beneath the transparent conductive layer.</p>
申请公布号 EP2958704(A1) 申请公布日期 2015.12.30
申请号 EP20140705404 申请日期 2014.02.14
申请人 M-SOLV LIMITED 发明人 PRIETO RIO, CAMILO;CHAN, YUK KWAN
分类号 B23K26/36;B23K26/06;B23K26/40;G06F3/044 主分类号 B23K26/36
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