| 摘要 |
This disclosure pertains to a solid-state imaging element, a manufacturing method therefor, and an electronic device that make it possible to minimize dark currents. Said solid-state imaging device is provided with a photoelectric conversion section formed outside a semiconductor substrate and a charge retention section that is formed inside said semiconductor substrate and retains charge generated in the photoelectric conversion section. The bottom surface of the charge retention section, which faces away from the gate of a transistor formed on the semiconductor substrate, is covered by an insulating film. This disclosure can be applied, for example, to a solid-state imaging element. |
