发明名称 THROUGH SILICON VIA BASED PHOTOVOLTAIC CELL
摘要 An embodiment includes an apparatus comprising: a first photovoltaic cell; a first through silicon via (TSV) included in the first photovoltaic cell and passing through at least a portion of a doped silicon substrate, the first TSV comprising (a)(i) a first sidewall, which is doped oppositely to the doped silicon substrate, and (a)(ii) a first contact substantially filling the first TSV; and a second TSV included in the first photovoltaic cell and passing through at least another portion of the doped silicon substrate, the second TSV comprising (b)(i) a second sidewall, which comprises the doped silicon substrate, and (b)(ii) a second contact substantially filling the second TSV; wherein the first and second contacts each include a conductive material that is substantially transparent. Other embodiments are described herein.
申请公布号 WO2015199717(A1) 申请公布日期 2015.12.30
申请号 WO2014US44550 申请日期 2014.06.27
申请人 INTEL CORPORATION 发明人 PHOA, KINYIP;NIDHI, NIDHI;JAN, CHIA-HONG;HAFEZ, MAC M.;CHEN, VINCENT
分类号 H01L31/042;H01L31/18 主分类号 H01L31/042
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