| 摘要 |
The present technique pertains to a semiconductor device in which impedance control can be implemented, and to a method for manufacturing the semiconductor device. Input/output wiring (23) and grounding wiring (22) are provided with through-holes by blasting or electrical discharge machining so as to form a stripline structure, and a metal film is then formed from the front and the rear. Adjusting the diameter of the conductor of the input/output wiring (23) and the thickness of the insulation layers between the input/output wiring (23) and the grounding wiring (22) makes it possible to configure an impedance-controlled semiconductor device. The present technique can be applied to semiconductor devices. |
