| 摘要 |
Proposed is an epitaxial wafer manufacturing method capable of manufacturing an epitaxial wafer having a higher crystallinity and surface flatness as compared with a conventional method and also proposed is an epitaxial wafer. The epitaxial wafer manufacturing method is characterized by having a growing step of forming an AlN layer (12) on a sapphire substrate (11), said AlN layer (12) having a half-value width of the x-ray rocking curve of 110 seconds or less in the (0002) plane and a surface roughness (Ra) of 0.23 nm or less, and a heat treatment step of performing a heat treatment on the sapphire substrate on which the AlN layer has been formed in a nitrogen gas atmosphere at a temperature of 1580 °C to 1730 °C, wherein a defect region (13) in the vicinity of the interface between said sapphire substrate after the heat treatment step and the AlN layer (12), where plane defects are formed, is 15 nm or less in thickness. |
