发明名称 |
METHOD FOR MANUFACTURING LIGHT EMITTING ELEMENT, COMPOUND SEMICONDUCTOR WAFER |
摘要 |
<p>A Metal Organic Vapor Phase Epitaxy step of growing a light emitting layer section 24, composed of a first Group III-V compound semiconductor, epitaxially on a single crystal growth substrate 1 by Metal Organic Vapor Phase Epitaxy, and a Hydride Vapor Phase Epitaxial Growth step of growing a current spreading layer 7 on the light emitting layer section 24 epitaxially by Hydride Vapor Phase Epitaxial Growth Method, are conducted in this order. Then, the current spreading layer 7 is grown, having a low-rate growth layer 7a positioned close to the light emitting layer side and then a high-rate growth layer 7b, having a growth rate of the low-rate growth layer 7a lower than that of the high-rate growth layer 7b, so as to provide a method of fabricating a light emitting device capable of preventing hillock occurrence while forming the thick current spreading layer.</p> |
申请公布号 |
EP2009706(B1) |
申请公布日期 |
2015.12.30 |
申请号 |
EP20070738921 |
申请日期 |
2007.03.19 |
申请人 |
SHIN-ETSU HANDOTAI CO., LTD. |
发明人 |
KUME, FUMITAKA;SHINOHARA, MASAYUKI |
分类号 |
H01L33/14;H01L21/205;H01L33/00 |
主分类号 |
H01L33/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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