SELF-ALIGNED DUAL DAMASCENE PROCESS WITH AIR-GAP ASSISTED ETCH

摘要

A semiconductor process for providing a metal layer uses the following steps: A barrier dielectric layer (100) is deposited on a semiconductor layer comprising an exposed metal line (90). A via layer (110) is formed on top of the barrier dielectric layer comprising at least one via (140). A non-conformal film (150) is deposited on top of the via layer thereby transforming the at least one via into a void (140), and at least one trench is etched into the non-conformal film thereby opening the void, and creating a dual-damascene layer.