发明名称 Method of manufacturing quantum dots
摘要 A method of manufacturing a quantum dot, the method including: mixing of a Group II precursor and a Group III precursor in a solvent to prepare a first mixture; heating the first mixture at a temperature of about 200°C to about 350°C; adding a Group V precursor and a Group VI precursor to the first mixture while maintaining the first mixture at the temperature of about 200°C to about 350°C to prepare a second mixture; and maintaining the second mixture at the temperature of about 200°C to about 350°C to form a quantum dot.
申请公布号 EP2368964(A3) 申请公布日期 2015.12.30
申请号 EP20100015595 申请日期 2010.12.14
申请人 SAMSUNG DISPLAY CO., LTD.;SNU R&DB FOUNDATION 发明人 KANG, JONG HYUK;SHIN, JUNGHAN;PARK, JAE BYUNG;LEE, DONG-HOON;NAM, MINKI;CHAR, KOOKHEON;LEE, SEONGHOON;BAE, WANKI;LIM, JAEHOON;JUNG, JOOHYUN
分类号 C09K11/62;H01L21/20;H01L21/36 主分类号 C09K11/62
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