发明名称 |
SYSTEM AND METHODS FOR FABRICATING BORON NITRIDE NANOSTRUCTURES |
摘要 |
This disclosure provides systems, methods, and apparatus related to boron nitride nanomaterials. In one aspect, a method includes generating a directed flow of plasma. A boron- containing species is introduced to the directed flow of the plasma. Boron nitride nanostructures are formed in a chamber. In another aspect, a method includes generating a directed flow of plasma using nitrogen gas. A boron-containing species is introduced to the directed flow of the plasma. The boron-containing species can consist of boron powder, boron nitride powder, and/or boron oxide powder. Boron nitride nanostructures are formed in a chamber, with a pressure in the chamber being about 3 atmospheres or greater. |
申请公布号 |
WO2015200496(A1) |
申请公布日期 |
2015.12.30 |
申请号 |
WO2015US37448 |
申请日期 |
2015.06.24 |
申请人 |
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA |
发明人 |
FATHALIZADEH, AIDIN;PHAM, THANG;MICKELSON, WILLIAM;ZETTL, ALEXANDER |
分类号 |
B82Y40/00;C01B21/06;C04B35/622 |
主分类号 |
B82Y40/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|