半导体表面施以假覆膜之蚀刻法,申请号TW012069-传众专利搜索

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发明名称	半导体表面施以假覆膜之蚀刻法
摘要
申请公布号	TW003997	申请公布日期	1968.06.01
申请号	TW012069	申请日期	1967.03.11
申请人	西方电气公司	发明人	ARPAD ALBERT BERCH;WILIEM VAN GELDER
分类号	C23F	主分类号	C23F
代理机构		代理人	林敏生台北巿南京东路二段一二五号七楼伟成第一大楼
主权项
地址	U.S.A.

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