LIFT-OFF METHOD FOR SILICONE SUBSTRATE

摘要

The present invention relates to a method for peeling off the surface of a silicon substrate, which can uniformly peel off the surface of a silicon substrate by a successive wet deposition process and a low temperature process. The method for peeling off the surface of the silicon substrate includes the steps of: (1) forming a metal seed layer on the surface of a silicon substrate by an electroless deposition method; (2) forming a metal stress layer on the seed layer by an electrolysis deposition method; and (3) peeling off the surface of the silicon substrate by an electrolysis deposition stress remaining on the stress layer.