| 摘要 |
A photonic circuit device 100, comprising: a light-generating structure, comprising: a n-doped semiconductor layer 32; a p-doped semiconductor layer 37; and an active gain section 34, wherein the active gain section 34 comprises layers stacked along a stacking direction (Ds); is arranged between the n-doped semiconductor layer 32 and the p-doped semiconductor layer 37, and is coupled in the device for generating light propagating along a given propagation direction (Dp); and at least two electrical contact pads including an n-contact electric pad 31 and a p-contact electric pad 38, in electrical contact with the n-doped semiconductor layer 32 and the p-doped semiconductor layer 37, respectively, where one 38 of the electrical contact pads, at least, is in direct contact with the light-generating structure and wherein a ratio between a width Wc of said one 38 of the electrical contact pads to the width WL of the active gain section 34 is between 1.35 and 3.85, each of said widths Wc and WL measured in a same direction (Dw) that is orthogonal to each of the stacking direction (Ds) and said given propagation direction (Dp). Said one 38 of the electrical pads may be stacked onto the light-generating structure in the stacking direction (Ds) and may have cantilevered overhangs extending beyond the width WL of the gain section 34. The gain section may comprise a stack of InAlGaAs layers of alternating thicknesses and the n-doped and p-doped semiconductor layers may comprise InP. |
