FINFET MANUFACTURING METHOD

摘要

A FinFET manufacturing method, comprising: a. providing a substrate (100), and forming a fin (200) on the substrate; b. forming an isolation layer (300) on the substrate at two sides of the fin (200); c. forming a punch-through stopping layer (310) and a diffusion stopping layer (320) in the fin which is at two sides of an upper part of the isolation layer (300); and d. forming a source and a drain area respectively at two ends of the fin, forming a gate structure (500) at a middle part of the fin, and filling an interlayer dielectric layer (400) over the isolation layer (300). The present method effectively optimizes a PTSL distribution, and improves the performance of a device.