发明名称 SUBSTRATE-PROCESSING DEVICE, PROGRAM, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 The present invention has a step for preparing a substrate having an oxide film formed on the surface thereof, a step for preprocessing the surface of the oxide film, and a step for forming a carbon-containing nitride film on the surface of the preprocessed oxide film by: executing, for a predetermined number of times, a cycle that non-simultaneously carries out a step for supplying a raw material gas to the substrate, a step for supplying a carbon-containing gas to the substrate, and a step for supplying a nitrogen-containing gas to the substrate; executing, for a predetermined number of times, a cycle that non-simultaneously carries out a step for supplying a raw material gas to the substrate and a step for supplying a gas containing carbon and nitrogen to the substrate; or executing, for a predetermined number of times, a cycle that non-simultaneously carries out a step for supplying a carbon-containing raw material gas to the substrate and a step for supplying a nitrogen-containing gas to the substrate.
申请公布号 WO2015199111(A1) 申请公布日期 2015.12.30
申请号 WO2015JP68132 申请日期 2015.06.24
申请人 HITACHI KOKUSAI ELECTRIC INC. 发明人 NAKAMURA YOSHINOBU;MAEDA KIYOHIKO;HIROSE YOSHIRO;SASAJIMA RYOTA;HASHIMOTO YOSHITOMO
分类号 H01L21/318;C23C16/02;C23C16/34;H01L21/3065;H01L21/31 主分类号 H01L21/318
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