WAVELIKE HARD NANOMASK ON A TOPOGRAPHIC FEATURE AND METHODS OF MAKING AND USING

摘要

An array of nanowires with a period smaller than 150 nm can be used for optoelectronics and semiconductor electronics applications. A hard nanomask is registered to a lithographically defined feature and can be used to manufacture such structures. This nanomask includes a substantially periodic array of substantially parallel elongated elements having a wavelike cross-section. The fabrication method of the nanomask may be contactless and uses ion beams.