| 摘要 |
Conductive oxide random access memory (CORAM) cells and methods of fabricating CORAM cells are described. For example, a material layer stack for a memory element includes a first conductive electrode. An insulating layer is disposed on the first conductive oxide and has an opening with sidewalls therein that exposes a portion of the first conductive electrode. A conductive oxide layer is disposed in the opening, on the first conductive electrode and along the sidewalls of the opening. A second electrode is disposed in the opening, on the conductive oxide layer. |
