发明名称 Trigate transistor structure with unrecessed field insulator and thinner electrodes over the field insulator
摘要 Techniques related to integrated circuits having MOSFETs with an unrecessed field insulator and thinner electrodes over the field insulator of ICs, systems incorporating such integrated circuits, and methods for forming them are discussed.
申请公布号 GB201520308(D0) 申请公布日期 2015.12.30
申请号 GB20150020308 申请日期 2013.06.26
申请人 INTEL CORPORATION 发明人
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