| 摘要 |
An ion implantation device comprises: a bearing framework moving in a vacuum preparation cavity, wherein the bearing framework comprises a frame part and a hollow part enclosed by the frame part, and the frame part is used for bearing a wafer by supporting the edge of the wafer; at least one first ion implantation device located at one side of a surface of the wafer, which is used for implanting ions from the surface of the wafer into the wafer; and at least one second ion implantation device located at one side of a back face of the wafer, which is used for implanting ions from the back face of the wafer into the wafer, wherein a plane where an ion beam is located is perpendicular to a moving direction of the bearing framework, the bearing framework is used for bearing the wafer to pass through an active region of the ion beam in the first ion implantation device and the second ion implantation device. The ion implantation device achieves ion implantation for two surfaces of a wafer by arranging an ion implantation device at either side of the wafer in the same vacuum preparation cavity, thereby improving the processing efficiency, and there is no need to arrange an additional support apparatus, so that the structure is simplified. |
