| 发明名称 | Low voltage embedded memory having cationic-based conductive oxide element | ||
| 摘要 | Low voltage embedded memory having cationic-based conductive oxide elements is described. For example, a material layer stack for a memory element includes a first conductive electrode. A cationic-based conductive oxide layer is disposed on the first conductive electrode. The cationic-based conductive oxide layer has a plurality of cation vacancies therein. A second electrode is disposed on the cationic-based conductive oxide layer. | ||
| 申请公布号 | US9224461(B2) | 申请公布日期 | 2015.12.29 |
| 申请号 | US201213686507 | 申请日期 | 2012.11.27 |
| 申请人 | Intel Corporation | 发明人 | Karpov Elijah V.;Doyle Brian S.;Kuo Charles C.;Chau Robert S. |
| 分类号 | G11C11/00;G11C13/00;H01L45/00;H01L27/24 | 主分类号 | G11C11/00 |
| 代理机构 | Blakely, Sokoloff, Taylor & Zafman LLP | 代理人 | Blakely, Sokoloff, Taylor & Zafman LLP |
| 主权项 | 1. A material layer stack for a memory element, the material layer stack comprising: a first conductive electrode; a cationic-based conductive oxide layer disposed on the first conductive electrode, the cationic-based conductive oxide layer having a plurality of cation vacancies therein; and a second electrode disposed on the cationic-based conductive oxide layer. | ||
| 地址 | Santa Clara CA US | ||