| 发明名称 | Method for manufacturing semiconductor optical device | ||
| 摘要 | A method for manufacturing a semiconductor optical device includes the steps of forming a semiconductor mesa by etching a stacked semiconductor layer, the semiconductor mesa being defined by two grooves, one on each side of the semiconductor mesa; forming a first insulating film on a side surface and a top surface of the semiconductor mesa; forming a resin film on the first insulating film, the resin film filling the grooves; etching the resin film on the semiconductor mesa to form a first opening in the resin film, the first insulating film being exposed through the first opening; etching the first insulating film exposed through the first opening to expose the top surface of the semiconductor mesa; depositing an ohmic metal on the top surface of the semiconductor mesa; and depositing a second insulating film on the ohmic metal and a surface of the resin film. | ||
| 申请公布号 | US9223088(B2) | 申请公布日期 | 2015.12.29 |
| 申请号 | US201414267175 | 申请日期 | 2014.05.01 |
| 申请人 | SUMITOMO ELECTRIC INDUSTRIES, LTD. | 发明人 | Kobayashi Hirohiko;Yoneda Yoshihiro;Yagi Hideki |
| 分类号 | H01L21/00;G02B6/132;G02B6/136;G02F1/025 | 主分类号 | H01L21/00 |
| 代理机构 | Smith, Gambrell & Russell LLP. | 代理人 | Smith, Gambrell & Russell LLP. |
| 主权项 | 1. A method for manufacturing a semiconductor optical device comprising the steps of: forming a stacked semiconductor layer on a substrate; forming a semiconductor mesa on the substrate by etching the stacked semiconductor layer, the semiconductor mesa being defined by a groove on each side of the semiconductor mesa; forming a first insulating film on a side surface and a top surface of the semiconductor mesa; forming a resin film on the first insulating film, the resin film filling the grooves on both sides of the semiconductor mesa; etching the resin film on the semiconductor mesa to form a first opening in the resin film, the first insulating film being exposed through the first opening; etching the first insulating film exposed through the first opening to expose the top surface of the semiconductor mesa; depositing an ohmic metal on the top surface of the semiconductor mesa by the steps of: forming an overhang in edges of the first opening by a photoresist, depositing the ohmic metal on the top surface of the semiconductor mesa exposed through the first insulating film in the first opening, and a surface of the photoresist, and removing the ohmic metal deposited on the photoresist by using a lift-off method; and depositing a second insulating film on the ohmic metal and a surface of the resin film. | ||
| 地址 | Osaka JP | ||