| 发明名称 | Resistive RAM and method of manufacturing the same | ||
| 摘要 | A resistive RAM and a method of manufacturing the same are provided. The resistive RAM includes a first electrode, a second electrode, a transition metal oxide (TMO) layer between the first and second electrodes, an activated metal layer between the first electrode and the TMO layer, and a metal oxynitride layer formed on a surface of the activated metal layer in the gas environment containing oxygen and nitrogen elements. | ||
| 申请公布号 | US9224947(B1) | 申请公布日期 | 2015.12.29 |
| 申请号 | US201414492096 | 申请日期 | 2014.09.22 |
| 申请人 | Winbond Electronics Corp. | 发明人 | Chang Shuo-Che;Wen Sung-Ying |
| 分类号 | H01L27/115;H01L45/00;H01L27/11;H01L49/02 | 主分类号 | H01L27/115 |
| 代理机构 | Jianq Chyun IP Office | 代理人 | Jianq Chyun IP Office |
| 主权项 | 1. A resistive RAM, comprising: a first electrode; a second electrode; a transition metal oxide (TMO) layer between the first electrode and the second electrode; an activated metal layer between the first electrode and the TMO layer; a first metal oxynitride layer formed on a surface of the activated metal layer in a gas environment containing oxygen and nitrogen elements; and a second metal oxynitride layer disposed between the second electrode and the TMO layer in the gas environment containing oxygen and nitrogen elements. | ||
| 地址 | Taichung TW | ||