Silicon carbide static induction transistor and process for making a silicon carbide static induction transistor

摘要

A static induction transistor is formed on a silicon carbide substrate doped with a first conductivity type. First recessed regions in a top surface of the silicon carbide substrate are filled with epitaxially grown gate regions in situ doped with a second conductivity type. Epitaxially grown channel regions in situ doped with the first conductivity type are positioned between adjacent epitaxial gate regions. Epitaxially grown source regions in situ doped with the first conductivity type are positioned on the epitaxial channel regions. The bottom surface of the silicon carbide substrate includes second recessed regions vertically aligned with the channel regions and silicided to support formation of the drain contact. The top surfaces of the source regions are silicided to support formation of the source contact. A gate lead is epitaxially grown and electrically coupled to the gate regions, with the gate lead silicided to support formation of the gate contact.

主权项

1. A method for fabricating a static induction transistor (SIT), comprising:
forming a plurality of first recessed regions in a top surface of a silicon carbide substrate doped with a first conductivity type; epitaxially growing a plurality of gate regions within the first recessed regions; in situ doping the gate regions with a second conductivity type; epitaxially growing a plurality of channel regions positioned between adjacent gate regions; in situ doping the channel regions with the first conductivity type; epitaxially growing a plurality of source regions on said plurality of channel regions; and in situ doping the source regions with the first conductivity type.