发明名称 |
Thermoelectric conversion device |
摘要 |
A thermoelectric conversion device includes: a substrate; two magnetic layers having a fixed magnetization direction with respect to the substrate; and at least one electrode including a material having a spin orbit interaction, wherein a gap (or dielectric layer of low thermal conductivity) is provided between the magnetic layers. A thickness of the gap (or dielectric layer) is of a distance within the range at that a magnetic dipole interaction is exerted, and a film thickness of the magnetic layers is of about a characteristic length determined by diffusion or the like of a magnetic excitation. |
申请公布号 |
US9224936(B2) |
申请公布日期 |
2015.12.29 |
申请号 |
US201214123956 |
申请日期 |
2012.06.06 |
申请人 |
NEC CORPORATION |
发明人 |
Nakamura Yasunobu;Kirihara Akihiro;Yorozu Shinichi |
分类号 |
H01L35/30;H01L35/32;H01L37/00 |
主分类号 |
H01L35/30 |
代理机构 |
McGinn IP Law Group PLLC |
代理人 |
McGinn IP Law Group PLLC |
主权项 |
1. A thermoelectric conversion device comprising:
a first magnetic layer and a second magnetic layer stacked with a surface-normal direction related to a top surface of the first magnetic layer, the first and the second magnetic layers including an oxide magnetic material comprising one of a garnet ferrite and a spinel ferrite, the first and the second magnetic layers each having a magnetization direction substantially in a plane direction thereof and parallel each other; a gap provided between the top surface of the first magnetic layer and a bottom surface of the second magnetic layer; and a first electrode including a material having a spin orbit interaction, the first electrode arranged in contact with a top surface of the second magnetic layer. |
地址 |
Tokyo JP |