发明名称 Thermoelectric conversion device
摘要 A thermoelectric conversion device includes: a substrate; two magnetic layers having a fixed magnetization direction with respect to the substrate; and at least one electrode including a material having a spin orbit interaction, wherein a gap (or dielectric layer of low thermal conductivity) is provided between the magnetic layers. A thickness of the gap (or dielectric layer) is of a distance within the range at that a magnetic dipole interaction is exerted, and a film thickness of the magnetic layers is of about a characteristic length determined by diffusion or the like of a magnetic excitation.
申请公布号 US9224936(B2) 申请公布日期 2015.12.29
申请号 US201214123956 申请日期 2012.06.06
申请人 NEC CORPORATION 发明人 Nakamura Yasunobu;Kirihara Akihiro;Yorozu Shinichi
分类号 H01L35/30;H01L35/32;H01L37/00 主分类号 H01L35/30
代理机构 McGinn IP Law Group PLLC 代理人 McGinn IP Law Group PLLC
主权项 1. A thermoelectric conversion device comprising: a first magnetic layer and a second magnetic layer stacked with a surface-normal direction related to a top surface of the first magnetic layer, the first and the second magnetic layers including an oxide magnetic material comprising one of a garnet ferrite and a spinel ferrite, the first and the second magnetic layers each having a magnetization direction substantially in a plane direction thereof and parallel each other; a gap provided between the top surface of the first magnetic layer and a bottom surface of the second magnetic layer; and a first electrode including a material having a spin orbit interaction, the first electrode arranged in contact with a top surface of the second magnetic layer.
地址 Tokyo JP