发明名称 |
Trench gated power device with multiple trench width and its fabrication process |
摘要 |
Power devices, and related process, where both gate and field plate trenches have multiple stepped widths, using self-aligned process steps. |
申请公布号 |
US9224855(B2) |
申请公布日期 |
2015.12.29 |
申请号 |
US201414168286 |
申请日期 |
2014.01.30 |
申请人 |
MaxPower Semiconductor Inc. |
发明人 |
Zeng Jun;Darwish Mohamed N. |
分类号 |
H01L29/49;H01L29/78;H01L29/417;H01L29/423;H01L29/66;H01L29/10;H01L29/40;H01L29/06;H01L29/08 |
主分类号 |
H01L29/49 |
代理机构 |
Groover & Associates PLLC |
代理人 |
Groover, III Robert O.;Groover Gwendolyn S. S.;Groover & Associates PLLC |
主权项 |
1. A semiconductor device, comprising:
a semiconductor mass; gate electrodes, and shield electrodes beneath said gate electrodes, in first trenches in said semiconductor mass, and field plate electrodes in second trenches in said semiconductor mass; wherein said first trenches and said second trenches both extend into a first surface of said semiconductor mass, and all have substantially the same depth; wherein said first and said second trenches each have a top portion which is wider than a middle portion thereof which has substantially vertical sidewalls, and also a bottom portion which is narrower than said middle portion; and wherein said gate electrodes, but not said field plate electrodes, are connected directly to receive a gate drive waveform; a first-conductivity-type source region, in said semiconductor mass, near said first trenches, and a second-conductivity-type body region adjacent said first trenches, and a second-conductivity-type body contact region surrounding and self-aligned to said second trenches; and a first-conductivity-type drain region at a second surface of said semiconductor mass; whereby, in the ON state, voltage applied to said gate electrode controls majority carrier emission from said source, to thereby allow current conduction between said source and said drain; and whereby said field plate electrodes affect isopotential contours, in the OFF state, to increase the breakdown voltage between said source and said drain. |
地址 |
San Jose CA US |