发明名称 |
Method of manufacturing an oxide semiconductor device and method of manufacturing a display device having the same |
摘要 |
Disclosed is a method of manufacturing an oxide semiconductor device, including: forming a gate electrode on a substrate; forming a gate insulating layer on the gate electrode; forming an active pattern on the gate insulating layer; forming a first mask pattern on the gate insulating layer and the active pattern; forming an insulating interlayer on the gate insulating layer, the active pattern, and the first mask pattern; forming a second mask pattern on the insulating interlayer, the second mask pattern comprising an opening that exposes a region where the first mask pattern is formed; forming contact holes exposing portions of the active pattern by patterning the insulating interlayer using the first mask pattern and the second mask pattern; and forming a source electrode and a drain electrode on the gate insulating layer by filling the contact holes, the drain electrode spaced apart from the source electrode. |
申请公布号 |
US9224831(B2) |
申请公布日期 |
2015.12.29 |
申请号 |
US201314140944 |
申请日期 |
2013.12.26 |
申请人 |
Samsung Display Co., Ltd. |
发明人 |
Lee Bong-Won |
分类号 |
H01L21/336;H01L21/84;H01L29/66;H01L29/786;H01L27/12 |
主分类号 |
H01L21/336 |
代理机构 |
H.C. Park & Associates, PLC |
代理人 |
H.C. Park & Associates, PLC |
主权项 |
1. A method of manufacturing an oxide semiconductor device, the method comprising:
forming a gate electrode on a substrate; forming a gate insulating layer on the gate electrode; forming an active pattern on the gate insulating layer; forming a first mask pattern on the gate insulating layer and the active pattern; forming an insulating interlayer on the gate insulating layer, the active pattern, and the first mask pattern; forming a second mask pattern on the insulating interlayer, the second mask pattern comprising an opening that exposes a region where the first mask pattern is formed; forming contact holes exposing portions of the active pattern by patterning the insulating interlayer using the first mask pattern and the second mask pattern; removing the first mask pattern and the second mask pattern after patterning the insulating interlayer using the first mask pattern and the second mask pattern; and forming a source electrode and a drain electrode on the active pattern by filling the contact holes, the drain electrode spaced apart from the source electrode. |
地址 |
Yongin-si KR |