Semiconductor device and method for manufacturing the same

摘要

A semiconductor device of an embodiment includes a semiconductor layer formed of a III-V group nitride semiconductor, a first silicon nitride film formed on the semiconductor layer, a gate electrode formed on the first silicon nitride film, a source electrode and a drain electrode formed on the semiconductor layer such that the gate electrode is interposed between the source electrode and the drain electrode, and a second silicon nitride film formed between the source electrode and the gate electrode and between the drain electrode and the gate electrode and having an oxygen atom density lower than that of the first silicon nitride film.

主权项

1. A semiconductor device comprising:
a semiconductor layer formed of a III-V group nitride semiconductor; a first silicon nitride film formed on the semiconductor layer; a gate electrode formed on the first silicon nitride film; a source electrode and a drain electrode formed on the semiconductor layer, the gate electrode is interposed between the source electrode and the drain electrode; and a second silicon nitride film formed between the source electrode and the gate electrode and between the drain electrode and the gate electrode, the second silicon nitride film containing oxygen and having an oxygen atom density lower than that of the first silicon nitride film, wherein an oxygen atom density of the second silicon nitride film is one digit or more lower than an oxygen atom density of the first silicon nitride film and greater than 1×1018 atoms/cm3, and the oxygen atom density of the first silicon nitride film is equal to or lower than 1×1021 atoms/cm3.