Write-assisted memory with enhanced speed

摘要

A write-assisted memory includes a pre-charge assist circuit that assists the pre-charge of the power supply voltage on a power supply lead for an accessed memory cell in a bit-line-multiplexed group of memory cells subsequent to a write-assist period by coupling charge from the power supply leads for the remaining non-accessed memory cells in the bit-line-multiplexed group of memory cells.

主权项

1. A memory, comprising:
a plurality of SRAM cells a plurality of power supply leads corresponding to the plurality of SRAM cells, each SRAM cell coupled to its corresponding power supply lead to receive power; a plurality of write assist circuits corresponding to the plurality of power supply leads, wherein each power supply lead couples to a power supply node through its corresponding write assist circuit, each write assist circuit being configured to lower a power supply voltage on its corresponding power supply lead during a write operation on the corresponding SRAM cell; and a pre-charge assist circuit including a plurality of pre-charge switches configured to couple the plurality of power supply leads together to share charge subsequent to each write operation.