| 发明名称 |
Integrated semiconductor device and method for fabricating the same |
| 摘要 |
An integrated semiconductor device and method for fabricating the same are provided wherein the integrated semiconductor device comprises a substrate a first stress-inducing layer, a second stress-inducing layer and an integrated circuit layer. The first stress-inducing layer covers on the substrate. The second stress-inducing layer partially covers on the first stress-inducing layer. The integrated circuit layer is bonded over the substrate. |
| 申请公布号 |
US9224696(B2) |
申请公布日期 |
2015.12.29 |
| 申请号 |
US201314095980 |
申请日期 |
2013.12.03 |
| 申请人 |
UNITED MICROELECTRONICS CORPORATION |
发明人 |
Li Shih-Wei;Chu Yun-Han;Wei Guo-Chih |
| 分类号 |
H01L23/00;H01L23/14;H01L21/02 |
主分类号 |
H01L23/00 |
| 代理机构 |
|
代理人 |
Tan Ding Yu |
| 主权项 |
1. An integrated semiconductor device, comprising:
a substrate; a first stress-inducing layer covering on the substrate; a second stress-inducing layer partially covering on the first stress-inducing layer; and an integrated circuit layer bonded over the substrate, wherein the substrate has a to surface, a bottom surface and at least one sidewall; the first stress-inducing layer and the second stress-inducing layer cover on the bottom surface and the at least one sidewall of the substrate; and the integrated circuit layer is bonded over the to surface of the substrate. |
| 地址 |
Hsinchu TW |
