发明名称 |
CMP slurry/method for polishing ruthenium and other films |
摘要 |
A method and associated composition for CMP processing of noble metal-containing substrates (such as ruthenium-containing substrates) afford both high removal rates of the noble metal and are tunable with respect to rate of noble metal removal in relation to removal of other films. Low levels of an oxidizing agent containing one or more peroxy-functional group(s) can be used along with a novel ligand to effectively polish noble metal substrates. |
申请公布号 |
US9224614(B2) |
申请公布日期 |
2015.12.29 |
申请号 |
US201414530965 |
申请日期 |
2014.11.03 |
申请人 |
Air Products and Chemicals, Inc. |
发明人 |
Shi Xiaobo |
分类号 |
H01L21/306;H01L21/321;C09K3/14;C09G1/02 |
主分类号 |
H01L21/306 |
代理机构 |
|
代理人 |
Yang Lina |
主权项 |
1. A method for chemical mechanical planarization of a surface having at least one feature thereon comprising a noble metal, said method comprising the steps of:
A) placing a substrate having the surface having the at least one feature thereon comprising the noble metal in contact with a polishing pad; B) delivering a polishing composition having a pH which is basic, comprising:
a) an abrasive;b) a cyanate salt; andc) an oxidizing agent containing at least one peroxy-functional group; and C) polishing the substrate with the composition. |
地址 |
Allentown PA US |