| 摘要 |
Diffusion regions having the same conductivity type are arranged on a side of a second wiring and a side of a third wiring, respectively under a first wiring connected to a signal terminal. Diffusion regions are separated in a whole part or one part of a range in a Y direction. That is, under first wiring, diffusion regions are only formed in parts opposed to diffusion regions formed under the second wiring and third wiring connected to a power supply terminal or a ground terminal, and a diffusion region is not formed in a central part in an X direction. Therefore, terminal capacity of the signal terminal can be reduced without causing ESD resistance to be reduced, in an ESD protection circuit with the signal terminal. |
| 主权项 |
1. A semiconductor integrated circuit device, comprising an ESD (Electro Static Discharge) protection circuit, wherein:
the ESD protection circuit comprises:
a first wiring extending in a first direction and electrically connected to a first terminal;a second wiring and a third wiring, extending in the first direction, electrically connected to a power supply terminal or a ground terminal, and disposed on both sides of the first wiring, respectively;a first diffusion region connected to and formed under the first wiring, having a first conductivity type, and disposed between the second wiring and the third wiring;a second diffusion region connected to and formed under the second wiring, having a second conductivity type, and disposed so as to be opposed to the first diffusion region; anda third diffusion region connected to and formed under the third wiring, having the second conductivity type, and disposed so as to be opposed to the first diffusion region, the second diffusion region, the first diffusion region, and the third diffusion region are disposed in this order in a second direction perpendicular to the first direction, the first conductivity type is different from the second conductivity type, a space between the second wiring and the first diffusion region in the second direction is larger than a space between the second diffusion region and the first diffusion region in the second direction, in a planar view, and a space between the third wiring and the first diffusion region in the second direction is larger than a space between the third diffusion region and the first diffusion region in the second direction, in a planar view. |
