发明名称 Wafer dicing from wafer backside and front side
摘要 Approaches for backside laser scribe plus front side laser scribe and plasma etch dicing of a wafer or substrate are described. For example, a method of dicing a semiconductor wafer having a plurality of integrated circuits on a front side thereof and metallization on a backside thereof involves patterning the metallization on the backside with a first laser scribing process to provide a first plurality of laser scribe lines on the backside. The method also involves forming a mask on the front side. The method also involves patterning, from the front side, the mask with a second laser scribing process to provide a patterned mask with a second plurality of scribe lines exposing regions of the semiconductor wafer between the integrated circuits, wherein the second plurality of scribe lines is aligned with the first plurality of scribe lines. The method also involves plasma etching the semiconductor wafer through the second plurality of scribe lines to singulate the integrated circuits.
申请公布号 US9224650(B2) 申请公布日期 2015.12.29
申请号 US201314103534 申请日期 2013.12.11
申请人 Applied Materials, Inc. 发明人 Lei Wei-Sheng;Eaton Brad;Kumar Ajay
分类号 H01L21/00;H01L21/46;H01L21/30;H01L21/78;H01L21/308;B23K26/32;B23K26/36;B23K26/40;H01L21/311;H01L21/3213 主分类号 H01L21/00
代理机构 Blakely Sokoloff Taylor Zafman LLP 代理人 Blakely Sokoloff Taylor Zafman LLP
主权项 1. A method of dicing a semiconductor wafer comprising a plurality of integrated circuits on a front side thereof and metallization on a backside thereof, the method comprising: patterning the metallization on the backside with a first laser scribing process to provide a first plurality of laser scribe lines on the backside, and die marking the back side of the semiconductor wafer during the first laser scribing process, the patterning performed without using a mask; subsequent to performing the first laser scribing process, forming a mask on the front side of the semiconductor wafer; patterning, from the front side of the semiconductor wafer, the mask with a second laser scribing process to provide a patterned mask and to provide a second plurality of scribe lines exposing regions of the semiconductor wafer between the integrated circuits, wherein the second plurality of scribe lines is aligned with the first plurality of scribe lines; and plasma etching the semiconductor wafer through the second plurality of scribe lines to singulate the integrated circuits.
地址 Santa Clara CA US