Through-wafer interconnection

摘要

A through-wafer interconnect and a method for fabricating the same are disclosed. The method starts with a conductive wafer to form a patterned trench by removing material of the conductive wafer. The patterned trench extends in depth from the front side to the backside of the wafer, and has an annular opening generally dividing the conductive wafer into an inner portion and an outer portion whereby the inner portion of the conductive wafer is insulated from the outer portion and serves as a through-wafer conductor. A dielectric material is formed or added into the patterned trench mechanical to support and electrically insulate the through-wafer conductor. Multiple conductors can be formed in an array.

主权项

1. A through-wafer interconnect which provides electrically conductive interconnection between electric contacts on a front side and a backside of a wafer in a microelectronic structure, the through-wafer interconnect comprising:
a through-wafer conductor passing through the front side of the wafer to the backside of the wafer; an insulator surrounding at least a main body portion of the conductor, wherein the insulator comprises a top portion and a bottom portion that are different from each other in at least one aspect of cross-sectional size or material property; and a frame surrounding the through-wafer conductor and the insulator, wherein at least a portion of the through-wafer conductor and a respective surrounding portion of the frame each comprise a native material of the wafer.