| 摘要 |
Provided is a biosensor comprising: a gate electrode; a source electrode; a drain electrode; and a semiconductor channel including a chalcogen compound, wherein the semiconductor channel is formed as a channel region formed between the source electrode and the drain electrode, the content of a biomaterial is detected by a method for detecting an electrical change caused by reaction between the chalcogen compound and the biomaterial, the biomaterial is an antigen having polarity or an electric charge or an antibody having polarity or an electric charge, the chalcogen compound is represented by MX_2, M represents Mo and X represents S or Se, the biomaterial is directly bonded to the chalcogen compound or the biomaterial is bonded to a marker to be bonded to the chalcogen compound, the method for detecting an electrical change is a field effect transistor (FET) method, and an antigen is detected quantitatively via a change in a Schottky barrier caused by bio-activation in a resistance component possessed by a back-to-back Schottky diode. |
