| 发明名称 | Methods of forming through silicon via openings | ||
| 摘要 | A method includes forming an opening in a substrate, and the opening completely extends through the substrate. A recast material is formed on sidewalls of the substrate exposed by the opening. A first chemical is applied in the opening to remove the recast material, wherein a residue of the first chemical remains on portions of the sidewalls after the applying of the first chemical. Moreover, A second chemical is applied in the opening to remove the residue of the first chemical, and the second chemical is different from the first chemical. | ||
| 申请公布号 | US9224636(B2) | 申请公布日期 | 2015.12.29 |
| 申请号 | US201414267303 | 申请日期 | 2014.05.01 |
| 申请人 | TSMC SOLID STATE LIGHTING LTD. | 发明人 | Chern Chyi Shyuan;Wu Hsin-Hsien;Chang Chun-Lin;Hsia Hsing-Kuo;Kuo Hung-Yi |
| 分类号 | H01L21/768;H01L21/02;H01L21/3065 | 主分类号 | H01L21/768 |
| 代理机构 | Muncy, Geissler, Olds & Lowe, P.C. | 代理人 | Muncy, Geissler, Olds & Lowe, P.C. |
| 主权项 | 1. A method, comprising: forming an opening in a substrate, the opening completely extending through the substrate, wherein a recast material is formed on sidewalls of the substrate exposed by the opening; applying a first chemical in the opening to remove the recast material, wherein a residue of the first chemical remains on portions of the sidewalls after the applying of the first chemical; and applying a second chemical in the opening to remove the residue of the first chemical, wherein the second chemical is different from the first chemical, wherein the second chemical contains a first component being substantially inactive with the substrate and a second component being substantially active with the material of the first chemical, wherein the first component is selected from the group consisting of helium, neon, argon, krypton, xenon, and radon, and the second component comprises hydride. | ||
| 地址 | Hsinchu TW | ||