Semiconductor storage device

摘要

A memory includes a semiconductor substrate. Magnetic tunnel junction elements are provided above the semiconductor substrate. Each of the magnetic tunnel junction elements stores data by a change in a resistance state, and the data is rewritable by a current. Cell transistors are provided on the semiconductor substrate. Each of the cell transistors is in a conductive state when the current is applied to the corresponding magnetic tunnel junction element. Gate electrodes are included in the respective cell transistors. Each of the gate electrodes controls the conductive state of the corresponding cell transistor. In active areas, the cell transistors are provided, and the active areas extend in an extending direction of intersecting the gate electrodes at an angle of (90−a tan(1/3)) degrees.

主权项

1. A semiconductor storage device comprising:
a first active area; a second active area located adjacent to the first active area and separated from the first active area by an element isolation area; a first contact plug provided on the first active area; a first word line intersecting with the first active area; a first via contact connected to the first contact plug through a first cell transistor, the first cell transistor having the first word line as a gate electrode and being located in the first active area; a first resistance change element connected to the first via contact; a second contact plug provided on the second active area; a second word line located adjacent to the first word line and intersecting with the second active area; a second via contact connected to the second contact plug through a second cell transistor, the second cell transistor having the second word line as a gate electrode and being located in the second active area; a second resistance change element electrically connected to the second via contact; and a source line commonly connected to the first and second resistance change elements.