发明名称 |
Method of manufacturing fluoride phosphor |
摘要 |
A method of manufacturing a fluoride phosphor includes mixing a first solution which contains at least Mn and F, a second solution which contains at least K and F, and a third solution which contains at least Si and F to form phosphor cores whose composition is represented by a formula K2[M1-aMn4+aF6] wherein a satisfies 0<a<0.2, and M includes at least one selected from group-IV elements of Ti, Zr, and Hf and group IVB elements of Si, Ge, Sn. The phosphor cores and a fourth solution containing a reducing agent are mixed to form a surface region on each of the phosphor cores so that a concentration of tetravalent Mn on the surface region of one of the phosphor cores is lower than in an inner region of the one of the phosphor cores. |
申请公布号 |
US9222017(B2) |
申请公布日期 |
2015.12.29 |
申请号 |
US201514804337 |
申请日期 |
2015.07.21 |
申请人 |
NICHIA CORPORATION |
发明人 |
Yoshida Tomokazu |
分类号 |
C09K11/61;H01L33/50;H01L33/00;H01L33/06;C09K11/67;C09K11/02;H01L33/54;G02F1/1335 |
主分类号 |
C09K11/61 |
代理机构 |
Mori & Ward, LLP |
代理人 |
Mori & Ward, LLP |
主权项 |
1. A method of manufacturing a fluoride phosphor, comprising:
mixing a first solution which contains at least Mn and F, a second solution which contains at least K and F, and a third solution which contains at least Si and F to form phosphor cores whose composition is represented by a formula K2[M1-aMn4+aF6] wherein a satisfies 0<a<0.2, and M comprises at least one selected from group-IV elements of Ti, Zr, and Hf and group IVB elements of Si, Ge, Sn; and mixing the phosphor cores and a fourth solution containing a reducing agent to form a surface region on each of the phosphor cores so that a concentration of tetravalent Mn on the surface region of one of the phosphor cores is lower than in an inner region of the one of the phosphor cores. |
地址 |
Anan-shi JP |