| 发明名称 | Method of controlling a laser beam annealing apparatus to manufacture thin film transistor substrate | ||
| 摘要 | A method of controlling a laser beam annealing apparatus to manufacture a thin film transistor substrate, the method including: irradiating a laser beam emitted from a laser beam irradiator onto an amorphous silicon layer on a substrate supported by a substrate support; obtaining photographic data with respect to at least a part of the substrate by using a photographic unit; and adjusting a position of at least one of the substrate support or the laser beam irradiator by using a position adjuster based on the photographic data obtained by the photographic unit. | ||
| 申请公布号 | US9221122(B2) | 申请公布日期 | 2015.12.29 |
| 申请号 | US201313923346 | 申请日期 | 2013.06.20 |
| 申请人 | Samsung Display Co., Ltd. | 发明人 | Choo Byoung-Kwon;Park Cheol-Ho;Son Hee-Geun;Kim Do-Yeob |
| 分类号 | H01S3/00;B23K26/04;B23K26/03 | 主分类号 | H01S3/00 |
| 代理机构 | Christie, Parker & Hale, LLP | 代理人 | Christie, Parker & Hale, LLP |
| 主权项 | 1. A method of controlling a laser beam annealing apparatus to manufacture a thin film transistor substrate, the method comprising: irradiating a laser beam emitted from a laser beam irradiator onto an amorphous silicon layer on a substrate supported by a substrate support; obtaining photographic data with respect to at least a part of the substrate by using a photographic unit; and adjusting a position of at least one of the substrate support or the laser beam irradiator by using a position adjuster based on the photographic data obtained by the photographic unit. | ||
| 地址 | Yongin-si KR | ||