Semiconductor structure and method for manufacturing the same

摘要

A semiconductor structure comprises a substrate having a first conductive type; a deep well having a second conductive type formed in the substrate and extending down from a surface of the substrate; a first well having the first conductive type and a second well having the second conductive type both formed in the deep well and extending down from the surface of the substrate, and the second well spaced apart from the first well; a gate electrode formed on the substrate and disposed between the first and second wells; an isolation extending down from the surface of the substrate and disposed between the gate electrode and the second well; a conductive plug penetrating into the isolation and reaching the bottom thereof; and a first doping electrode region having the second conductive type, formed within the second well and below the isolation to connect the conductive plug.

主权项

1. A semiconductor structure, comprising:
a substrate having a first conductive type; a deep well having a second conductive type, formed in the substrate and extending down from a surface of the substrate; a first well having the first conductive type, extending down from the surface of the substrate and formed in the deep well; a second well having the second conductive type, extending down from the surface of the substrate and formed in the deep well, and the second well spaced apart from the first well; a gate electrode, formed on a gate oxide on the substrate and disposed between the first and second wells; an isolation, connected to the gate oxide and extending down from the surface of the substrate and disposed between the gate electrode and the second well; a conductive plug penetrating into the isolation and reaching a bottom surface of the isolation, wherein the isolation is thicker than the gate oxide; a first doping electrode region having the second conductive type, formed below the isolation and within the second well to connect the conductive plug; a second doping electrode region having the second conductive type, extending down from the surface of the substrate and formed within the first well, wherein the gate electrode is disposed between the isolation and the second doping electrode region; and another conductive plug correspondingly and electrically connected to the second doping electrode region, wherein a bottom surface of said another conductive plug entirely and only contacts the second doping electrode region with the second conductive type.